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ON Semi Introduces 900V And 1200V SiC MOSFETs

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New devices target solar power inverters, on-board charging for electric vehicles, UPS, server power supplies, and EV charging stations

ON Semiconductor has expanded its range of wide bandgap (WBG) devices with the introduction of two additional families of SiC MOSFET. They are intended for use in a variety of demanding applications including solar power inverters, on-board charging for electric vehicles (EV), uninterruptible power supplies (UPS), server power supplies, and EV charging stations.

ON Semiconductor says its new 1200V and 900V N-channel SiC MOSFETs deliver faster switching performance and enhanced reliability when compared to silicon. A fast intrinsic diode with low reverse recovery charge delivers a significant reduction in power losses, boosts operating frequencies, and increases the power density of the overall solution.

High frequency operation is further enhanced by the small chip size that leads to a lower device capacitance and reduced gate charge - Qg (as low as 220 nC), reducing switching losses when operating at high frequencies. These enhancements improve efficiency, reduce EMI when compared with Si-based MOSFETs, and allow for the use of fewer (and smaller) passive components. The robust SiC MOSFETs offer higher surge ratings, improved avalanche capability and improved short circuit robustness when compared to Si devices, delivering the higher reliability and longer lifetimes that are essential in demanding modern power applications. A lower forward voltage provides threshold-free on-state characteristics that reduce the static losses that occur when the device is conducting.

1200V devices are rated at up to 103 A (ID Max.), while 900V devices carry ratings as high as 118 A. For applications requiring higher currents, the ON Semiconductor MOSFETs can be operated in parallel, due to its positive temperature coefficient / temperature independence.

Commenting on the new SiC MOSFET devices, Gary Straker, VP and general manager, Power MOSFET Division at ON Semiconductor said: “If design engineers are to meet the challenging efficiency and power density goals that modern renewable energy, automotive, IT and telecom applications demand, then they require high performance, high reliability MOSFET devices. ON Semiconductor's WBG SiC MOSFETs extend performance beyond what was possible with silicon devices, delivering lower losses, higher operating temperatures, faster switching, improved EMI and better reliability. Further supporting the engineering community, ON Semiconductor provides a wide range of resources and tools that simplify and speed up the design process.”

All of ON Semiconductor's SiC MOSFETs are Pb-free and Halide free, and the devices intended for automotive applications are AEC-Q100 qualified and PPAP capable. All devices are offered in industry standard TO-247 or D2PAK packages.



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