Mitsubishi announces 1200V SiC-MOSFET
Low power consumption and miniaturisation of power-supply systems, such as EV on-board chargers
Mitsubishi Electric has launched its N-series 1200V SiC-MOSFET featuring low power loss and high tolerance to self-turn-on. The new series will help to reduce the power consumption and miniaturise power supply systems requiring high-voltage conversion, such as electric vehicle (EV) on-board chargers, photovoltaic power systems and more. Sample shipments will start this July.
Junction field effect transistor (JFET) doping technology reduces both switching loss and on-resistance, achieving an industry-leading2 figure of merit (FOM3) of 1,450mΩ·nC. Power consumption in power-supply systems is reduced by approximately 85% compared to using conventional Si-IGBTs.
By reducing mirror capacitance, self-turn-on tolerance improves by 14 times compared with competitor's products. Thus, fast switching operation can be realised and helps reduce switching loss.
Reduced switching-power loss enables the downsising and simplification of cooling systems as well as the downsising of peripheral components, such as reactor by driving the power semiconductor with a higher carrier frequency5, thereby helping to reduce the cost and sise of overall power-supply systems.
There are zix models for various applications including AEC-Q101 compliant models.
Mitsubishi Electric will exhibit its new N-series 1200V SiC-MOSFET at major trade shows, including PCIM Asia 2020 in Shanghai, China from November 16 to 18.
