EPC launches Latest 100V eGaN FETs
New devices for 48VOUT synchronous rectification, class-D audio, infotainment, and lidar increase benchmark performance versus silicon
EPC has announced two new enhancement-mode eGaN power transistors with the introduction of EPC2218 and EPC2204100 V eGaN FETs. The applications for these devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.
The EPC2218 (3.2 mΩ, 231 Apulsed) and the EPC2204 (6 mΩ, 125 Apulsed) have nearly 20 percent lower RDS(on), as well as increased DC ratings compared with prior generation eGaN FET products. The performance advantage over a benchmark silicon device is even higher.
The EPC2204 has 25 percent lower on-resistance, yet is three times smaller in size. Gate charge (QG) is less than half that of the silicon MOSFET benchmark, and like all eGaN FETs, there is no reverse recovery charge (QRR), enabling lower distortion class-D audio amplifiers, as well as more efficient synchronous rectifiers and motor drives.
Performance comparison of benchmark silicon 100 V FET vs. 100 V eGaN FETs
Alex Lidow, EPC’s co-founder and CEO commented: “With the clear superiority of these new 100 V eGaN FETs, one might expect them to be priced at a premium. However, EPC has priced these state-of-the-art 100 V transistors comparable with their aging ancestor, the silicon power MOSFET. Designers can take advantage of devices that are higher performance, smaller, more thermally efficient, and at a comparable cost. The displacement of the power MOSFET with GaN devices continues to accelerate.”