Toshiba Launches 1200V SiC MOSFET
Second generation device reduces losses to increases power efficiency
Toshiba Electronics Europe has launched a 1200V SiC MOSFET for high power industrial applications including 400V AC input AC-DC power supplies, Photovoltaic (PV) inverters and bi-directional DC-DC converters for uninterruptible power supplies (UPS).
The new TW070J120B SiC-based power MOSFET delivers higher voltage resistance, higher-speed switching, and lower On-resistance when compared to conventional silicon MOSFETs and IGBTs. As a result, the new MOSFET will make a significant contribution to reduced power consumption and improved power density, leading to opportunities for system downsizing, according to Toshiba.
Made with Toshiba’s second-generation chip design, the new SiC MOSFET offers enhanced reliability. Additionally, the TW070J120B realises low input capacitance (CISS) of 1680pF (typ.), a low gate-input charge (Qg) of 67nC (typ.), and a drain-to-source On-resistance (RDS(ON)) of 70mΩ (typ.).
When compared with a 1200V silicon IGBT such as Toshiba’s GT40QR21, the new device reduces turn-Off switching loss by approximately 80 percent and switching time (fall time) by around 70 percent, while delivering low On-voltage characteristics with a drain current (ID) of up to 20A.
The gate threshold voltage (Vth) is set high (in the range 4.2V to 5.8V), which reduces the possibility of unintended or spurious turn On or Off. Furthermore, incorporation of a SiC Schottky barrier diode (SBD) with a low forward voltage (VDSF) of just -1.35V (typ.) also helps to reduce losses.
Housed in a TO-3P(N) package, the new TW070J120B MOSFET will enable the design of higher efficiency power solutions, especially in industrial applications, where the increased power density will also contribute to reduced equipment size and weight.
The devices is shipping now.