Mitsubishi to Launch 4-terminal 1200V SiC-MOSFETs
Helps to reduce power consumption and physical size of power-supply systems
Mitsubishi Electric has announced the coming launch of a new series of SiC MOSFETs, the N-series of 1200V devices in a TO-247-4 package, which achieves 30 percent less switching loss compared to the existing TO-247-3 package products.
According to the company, the new series will help to reduce the power consumption and physical size of power-supply systems requiring high-voltage conversion, such as electric vehicle on-board chargers and photovoltaic power systems. Sample shipments will start this November.
The new series devices come in a four-pin package to help reduce power consumption and physical size of power-supply systems. They feature a figure of merit (FOM3) of 1,450mΩ-nC and high self-turn-on tolerance. The TO-247-4 package is equipped with independent driver source terminal as well as conventional 3-pin package.
The four-pin package is said to help reduce parasitic inductance, a problem in high-speed switching. Eliminating gate-source voltage drops due to current variations helps to reduce switching loss by approximately 30 percent compared with TO-247-3 products.
Using a higher carrier frequency to drive the new power semiconductors helps to reduce switching-power loss, enabling smaller and simpler cooling systems as well as smaller reactors and other peripheral components, thereby helping to reduce the power consumption and physical size of overall power-supply systems.
There will be six models for a variety of applications including models compatible with Automotive Electronics Council's AEC-Q101 standards for use not only in industrial applications, e.g. photovoltaic systems, but also EV applications.
Creepage distance (shortest distance over surface between two conductive parts) between drain terminal and source terminal made wider than in TO-247-3 package products for more flexible application, including in outdoor installations where dust and dirt easily accumulate.
