Richardson Announces Availability of UnitedSiC FETs
New Generation 4 SiC FETs in stock and ready to ship
Richardson Electronics has announced the availability of UnitedSiC’s Gen 4 SiC FETs.
Released earlier this week, the Gen 4 SiC FETs, named UJ4C, are the first to be rated at 750V. Based on key Figures of Merit (FoM), the UJ4C series enables new performance levels and works with all the typical Si IGBT, Si MOSFET, and SiC MOSFET drive voltages.
Available in 18- and 60-mOhm options and 3- and 4-lead TO247 packages, these new SiC FETs (UJ4C075018K3S, UJ4C075060K3S, UJ4C075018K4S, UJ4C075060K4S), provide increased efficiency, reduced on-resistance per unit area, low intrinsic capacitance, and offer the lowest integral diode VF with excellent reverse recovery and reduced dead-time losses.
In hard-switching applications, these products exhibit the lowest RDS(on) x EOSS (mohm-uJ) resulting in lower turn-on and turn-off loss, while in soft-switching applications, their low RDS(on) x Coss(tr) (mohm-nF) specification provides lower conduction loss and higher frequency. Applications that benefit the most from these devices are automotive, industrial charging, telecom rectifiers, datacenter PFC, and DC-DC conversion as well as renewable energy and energy storage.
“Congratulations UnitedSiC on being the first to reach a 750V rating," said Greg Peloquin, executive VP of Richardson Electronics' Power & Microwave Technologies group. “This evolution in power conversion technology is a win for the industry. We are excited to partner with UnitedSiC on this exciting expansion to their product portfolio.”
