EPC Launches 40V eGaN FET
Suitable for high power density solutions for USB-C battery chargers and ultra-thin point-of-load converters
EPC, a maker of enhancement-mode GaN on silicon (eGaN) power FETs and ICs, has introduced the EPC2055 (3 mΩ, 40 V) eGaN FET.
This device is suitable for applications with demanding requirements for performance in space-constrained form factors including USB-C battery chargers and ultra-thin point-of-load (POL) converters. Other low-voltage applications benefiting from the fast-switching speeds and ultra-high efficiency of the EPC2055 include LED lighting, 12 V – 24 V input motor drivers, and lidar systems for robotics, drones, and autonomous cars.
According to Alex Lidow, EPC’s co-founder and CEO: “The EPC2055 is a very good example of the rapid evolution of GaN FET technology. This 40 volt device offers both smaller size and reduced parasitics compared with previous-generation 40 V GaN FETs and at lower cost; thus, offering designers both improved performance and cost savings.”
The EPC90132 development board is a 40V maximum device voltage, 25 A maximum output current, half bridge with onboard gate drives, featuring the EPC2055 eGaN FETs. This 50.8 mm x 50.8 mm board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2055.
