GeneSiC Announces Latest 1200V SiC MOSFETs
3rd generation devices feature the Industry’s best figure-of-merits, according to company
GeneSiC Semiconductor's next-generation 1200V G3RSiC MOSFETs with RDS(ON) levels ranging from 20 mΩ to 350 mΩ are said to deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts.
System benefits include higher efficiency, faster switching frequency, increased power density, reduced ringing (EMI) and compact system size.
These G3R SiC MOSFETs, offered in optimised low-inductance discrete packages (SMD and through hole), are optimised for power system designs requiring elevated efficiency levels and ultra-fast switching speeds. These devices have substantially better performance levels as compared to competing products, according toGeneSiC.
“After years of development work towards achieving the lowest on-state resistance and enhanced short circuit performance, we are excited to release the industry's best performing 1200V SiC MOSFETs with over 15+ discrete and bare chip products, " said Ranbir Singh, president at GeneSiC Semiconductor.
"If the next-generation power electronics systems are to meet the challenging efficiency, power density and quality goals in applications like automotive, industrial, renewable energy, transportation, IT and telecom, then they require significantly improved device performance and reliability as compared to presently available SiC MOSFETs,” he added.
AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST)
and will feature online
versions of the market-leading physical events: CS International
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Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.
We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.
Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.
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