Loading...
News Article

CISSOID expands SiC Power Module range

News

New modules target e-Mobility and meet demand for natural cooling in aerospace

CISSOID, a maker of high temperature semiconductors and power modules, is adding to its growing platform of 3-Phase SiC MOSFET Intelligent Power Module (IPM) products by introducing new liquid-cooled modules for e-mobility tailored for lower switching losses or for higher power.

The company is also introducing a module based on a lightweight AlSiC flat baseplate that meets the demand for natural convection or forced cooling in aerospace and in dedicated industrial applications. These products integrate a 3-Phase SiC MOSFET module with a powerful gate driver.

These new IPMs leverage a technology platform that can be rapidly adapted to new voltage, power and cooling requirements. They greatly accelerate the design of SiC-based power converters enabling high efficiency and high power density. The embedded gate driver solves multiple challenges related to fast-switching SiC transistors: negative drive and Active Miller Clamping (AMC) prevent parasitic turn-on; Desaturation detection and Soft-Shut-Down (SSD) react rapidly but safely to short-circuit events; Undervoltage Lockout (UVLO) functions on gate driver and DC bus voltages monitor the proper operation of the system.

Two new liquid-cooled power modules based on a pin fin baseplate are rated for 1200V blocking voltages and for 340A to 550A Maximum Continuous Currents. The On Resistance ranges from 2.53mOhms to 4.19mOhms depending on current rating. The total switching energies are as low as 7.48mJ (Eon) and 7.39mJ (Eoff) at 600V/300A. The co-design of the power module and the gate driver enables optimizing the IPMs for lowest switching energies by carefully tuning dV/dt and controlling voltage overshoots inherent to fast switching. The Reverse Bias Safe Operating Aera (RBSOA) authorises peak currents up to 600A with DC bus voltages up to 880V making the power modules perfectly safe for 800V battery applications.

The new-air cooled module is designed for applications where liquid cooling is not an option, like aerospace electromechanical actuators and power converters, for example. This module is rated for a blocking voltage of 1200V and a Maximum Continuous Current of 340A. The On resistance is equal to 3.25mOms. Turn-on and turn-off switching energies are respectively 8.42mJ and 7.05mJ at 600V and 300A. The power module is cooled down through an AlSiC flat baseplate. Thermally robust, the module is rated for 175°C junction temperature and the gate driver for 125degC ambient temperature.

"We initially developed this IPM platform to accelerates SiC-based motor drives development for E-Mobility and we are also very pleased to see demand from aerospace customers" says Dave Hutton, CEO at CISSOID. "We are delighted to deliver this new SiC intelligent power module designed for natural convection or forced cooling in compact and lightweight power converters addressing these new demanding markets."

SPONSOR MESSAGE

Secure Your Hydrogen Supply

A study supply of high-purity hydrogen is critical to semiconductor fabrication. Supply chain interruptions are challenging manufacturers, leading to production slowdowns and stoppages. On-site hydrogen generation offers a scalable alternative for new and existing fabs, freeing the operator from dependence on delivered gas.

Plant managers understand the critical role that hydrogen plays in semiconductor fabrication. That important job includes crystal growth, carrier gas, wafer annealing, and in the emerging Extreme UV Lithography (EUV) that will enable new generations of devices. As the vast need for semiconductors grows across all sectors of world economies, so does the need for high-purity hydrogen.

Take control with Nel on-site hydrogen generation.

Read more
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
x
Adblocker Detected
Please consider unblocking adverts on this website