Power density boost for EasyDUAL CoolSiC modules
Infineon upgrades SiC MOSFET modules with new AIN ceramic
Infineon has upgraded the EasyDUAL CoolSiC MOSFET modules with a new aluminum nitride (AIN) ceramic.
The devices come in half-bridge configuration with an on-state resistance of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package. With high-performance ceramic, the 1200 V devices are suitable for high-power density applications including solar systems, uninterruptible power supplies, auxiliary inverters, energy storage systems and electric vehicle chargers.
The EasyDUAL modules FF11MR12W1M1_B70 and FF6MR12W2M1_B70 are equipped with the latest CoolSiC MOSFET technology that features superior gate-oxide reliability.
With the improved thermal conductivity of the DCB material, the thermal resistance to the heat sink (R thJH) can be lowered by up to 40 percent. Combined with the CoolSiC Easy modules, the new AIN ceramic enables an increase of the output power or reduces the junction temperatures. This can lead to an improved lifespan of the system, acccording to the company
