+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

Rohm develops Breakthrough 150V GaN HEMT


High 8V gate withstand voltage marks technology breakthrough for lower power consumption and greater miniaturation

Rohm has developed what it believes is the industry’s highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices – optimised for power supply circuits in industrial and communication equipment.

Along with mass-producing industry-leading SiC devices and a variety of feature-rich silicon devices, Rohm has developed GaN devices featuring superior high frequency operation in the medium voltage range. Cultivating technology that increases the rated gate-source voltage allows Rohm to propose a wider range of power solutions for a variety of applications.

As GaN devices provide improved switching characteristics and lower ON resistance than silicon devices, they are expected to contribute to lower power consumption and greater miniaturisation of switching power supplies used in base stations and data centres. However, drawbacks that include low rated gate-source voltage and overshoot voltage exceeding the max. rating during switching pose major challenges to device reliability.

In response, Rohm succeeded in raising the rated gate-source voltage from the typical 6V to 8V using an original structure. This makes it possible to both improve the design margin and increase the reliability of power supply circuits using GaN devices that require high efficiency.

In addition to maximising device performance with low parasitic inductance, we are also developing a dedicated package that facilitates mounting and delivers excellent heat dissipation, enabling easy replacement of existing silicon devices while simplifying handling during the mounting process.

Going forward, Rohm will accelerate the development of GaN devices based on this technology, with sample shipment planned for September 2021.

Application examples include 48V input buck converter circuits for data centres and base stations, boost converter circuits for the power amplifier block of base stations, Class D audio amplifiers, LiDAR drive circuits, and wireless charging circuits for portable devices

Search the news archive

To close this popup you can press escape or click the close icon.
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • View all news 22645 more articles
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: