Loading...
News Article

Cambridge spin-off raises £3m for next-gen displays

News

Porous GaN technology enables brighter, sharper, more vivid displays for smart devices

University of Cambridge spin-out Porotech has raised £3m to fund the next stage of development of its unique micro-LED production technique. Its display technology breakthrough heralds a new era of brighter, sharper, more vivid microdisplays for even the smallest devices.

Porotech has created a new class of porous GaN semiconductor material that is redefining what is possible. It offers performance improvements that are suitable for mass production and can be customised for individual customers’ needs.

Despite only spinning out in January 2020, Porotech has been generating revenue for 10 months – and is working with some of the biggest global names in display technology. In November 2020, the company launched the world’s first commercial native red indium gallium nitride (InGaN) LED epiwafer for micro-LED applications.

Porotech will now work to expand its novel approach to integrate InGaN-based red, green and blue (RGB) micro-LEDs for full-colour microdisplays – and ultimately create ‘smart’ pixels that can be controlled independently for unrivalled responsiveness and accuracy for things like AR gestures.

Currently, technologies being tested for smart pixels are largely based on aluminum indium gallium phosphide (AlInGaP) material and quantum dot colour conversion (QDCC). But AllnGaP struggles at the small pixel sizes required by AR – and QDCC suffers from uniformity and stability issues. In addition, both approaches require a mixture of different materials.

Porotech’s novel approach enables all three primary colours to be made with the same GaN material and integrated on a single wafer, with no need for special structuring. The company also plans to develop its own supply chain ecosystem to help it develop and produce products more quickly.

“Porous GaN is basically GaN with tiny holes in it that are a few tens of nanometres across,” said Porotech CEO and co-founder Tongtong Zhu. “It’s an entirely new engineered GaN material platform to build semiconductor devices on. It offers performance improvements that are suitable for mass production, scalable in wafer size – and crucial for the next generation of microdisplay devices such as AR glasses.

“We are already seeing high levels of demand for our standard and customised porous GaN substrates and micro-LED epiwafers, which we can provide on sapphire and silicon platforms ranging from 100mm (4inch) to 300mm (12inch).

“Smart pixels will be our next development – monolithically generated and integrating native self-emissive RGB micro-LEDs on a single wafer to give smaller, lighter, thinner displays that use less energy and offer the greater accuracy required for things like AR gestures.”

Porotech’s latest funding round was led by Speedinvest, with participation from previous investors IQ Capital,Cambridge Enterprise, Martlet, and Cambridge Angels.

Rick Hao, principal at Speedinvest, said: “The revolutionary technology developed by Porotech is set to transform the electronics industry as demand grows for smaller, lighter, sharper displays that are more accurate and environmentally friendly than ever before.

“This new type of porous GaN semiconductor material fits within existing industry processes and is robust and flexible enough to be tailored to different applications. Porotech has demonstrated that it has both the product and the commercial capability to become a key player in next-generation display technology.”

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: