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StratEdge to show latest GaN, SiC and GaAs packages


Company to exhibit at the International Symposium for Microelectronics (IMAPS) 2021 in San Diego

StratEdge Corporation, a developer of high-frequency and high-power semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, has announced that its technical experts will be available to discuss the best types of packaging and assembly services for devices at the live International Symposium for Microelectronics (IMAPS) 2021 in San Diego, California, 10th to 14th November.

StratEdge will show its newest line of small outline thermally enhanced alumina/glass sidewall packages (pictured above) for power semiconductors at IMAPS. The new line of packages can be used for silicon, SiC, GaN, and other compound semiconductors in power integrated circuit applications. Specific devices include amplifiers, discrete transistors, and diodes where greater than 0.5 Watt power is consumed.

StratEdge will also showcase packages used to support 5G infrastructure demands. The packages, most often used to protect high-power laterally-diffused metal-oxide semiconductor (LDMOS), GaAs, SiC, and GaN devices, match standard outlines developed to support cellular base stations.

"GaN-on-SiC devices are frequently used in 5G base stations, but these devices can have extremely high power densities, which generate a tremendous amount of localized heat. StratEdge packages use copper-molybdenum-copper (CMC) bases to dissipate this heat, increasing the power output the chip achieves and enabling the device to operate at cooler temperatures so it lasts longer, has higher reliability, and performs more efficiently," said Casey Krawiec, vice president of global sales.

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