Nexperia uses Aixtron tech to enter SiC market.
AIX G5 WW C system meets high quality demands of SiC power electronics
Semiconductor firn Nexperia is using Aixtron's fully automated AIX G5 WW C production technology to enter the high performance SiC device market.
"Wide-band-gap semiconductors such as GaN and SiC have unique physical properties. They enable high power density and efficiency at lower system and operating costs. SiC technology is also now advanced enough to meet the stringent requirements for mass production of devices for modern consumer and industrial products. Therefore, it is now time for Nexperia to take our next strategic step, the expansion of our portfolio to include power semiconductor devices based on SiC," says Mark Roeloffzen, general manager of the Bipolar Discretes Group at Nexperia.
He adds: "In the future, we will also cover the value-added stage of epi-wafer production in the field of high-performance components. For this important milestone, we know that Aixtron is the right partner for Nexperia."
Aixtron says its latest generation Planetary Reactor is specifically designed to meet the very high demands of SiC power electronics. The system ensures the necessary excellent quality of the epitaxial layers on the wafers and has therefore been qualified by market leaders in SiC for the production of SiC devices.
"Nexperia is positioning itself at the right time in one of the most exciting growth markets in the semiconductor industry. We are pleased that Nexperia has chosen us as a partner in this important strategic step into a new market of the future. The performance characteristics of the SiC and GaN material classes, with their high efficiency, offer highly attractive potential for energy savings, heat reduction, weight and system size reduction, and thus lower overall system costs," saysFelix Grawert, CEO and President of Aixtron SE.
"SiC and GaN semiconductors offer higher energy efficiency in applications compared to conventional power electronics based on silicon and thus contribute significantly to lower CO2 emissions. The properties of the materials predestine them in particular for applications in electric vehicles and their charging stations, data centers or in the field of renewable energies such as solar and wind power plants," adds Grawert.
At the beginning of the year, Nexperia had already started a significant investment program both in the expansion of its production capacities, and in research and development worldwide. As part of its global growth strategy, planned investments in Europe this year include production efficiency improvements and the implementation of new 200mm technologies at its European wafer fabs in Hamburg, Manchester and Newport. In Hamburg, the company is investing in new technologies for the expansion of its "wide band gap" SiC power device offering.
