Rohm starts to produce 150V GaN HEMTs
First of new EcoGaN family features breakthrough 8V withstand gate aoltage
Rohm has announced 150V GaN HEMTs which increase the gate withstand voltage (rated gate-source voltage) to 8V – ideally to be applied in power supply circuits for industrial equipment such as base stations and data centers along with IoT communication devices.
Along with mass-producing industry-leading SiC devices and feature-rich silicon devices, Rohm has developed GaN devices that achieve superior high frequency operation in the medium voltage range, allowing us to provide power solutions for a wider variety of applications.
These new products, from the GNE10xxTB series, uee an original structure that raises the rated gate-source voltage from the conventional 6V to 8V. As a result, degradation is prevented, even if overshoot voltages exceeding 6V occurs during switching - contributing to improved design margin and higher reliability in power supply circuits. The GNE10xxTB series is offered in a versatile package featuring superior heat dissipation and large current capability, facilitating handling during the mounting process.
Rohm has trademarked GaN devices that contribute to greater energy conservation and miniaturization under the name EcoGaN, and is working to expand the lineup with devices that improve performance. Going forward, Rohm will continue to develop control ICs that leverage analog power supply technology such as Nano Pulse Control and modules that incorporate these ICs, along with power solutions that contribute to a sustainable society by maximizing the performance of GaN devices.
