Innoscience unveils GaN-based 140W power supply
More than 2 percent efficiency gains achieved by using GaN
Innoscience Technology has announced a newhigh-density 140W power supply demo that uses the company's high- and low-voltage GaN HEMT devices to achieve efficiencies of over 95 percent (230VAC; 5V/28A). Measuring 60x60x22mm, the PSU has a power density of 1.76W/cm3.
Denis Marcon, general manager of Innoscience Europe and marketing manager for the USA and Europe, explained: "By using GaN switches for both the high- and low-voltage functions on this design, we are maximising efficiency rather than compromising it with lossy silicon devices. This is possible thanks to Innoscience's cost-effective and high-volume manufacturing processes and capabilities."
The 140W 300kHz AC/DC adapter uses a CRM Totem Pole PFC + AHB topology. It features Innoscience's INN650DA140A, a 650V /140mΩ GaN HEMT in the 5x6mm DFN package, for switches S1 and S2, the 650V/240mΩ, 8x8mm DFN-packaged INN650D240A for S3, and the INN650DA240A, a 5x6mm DFN 650V/240mΩ device for S4. S5 and S6 are delivered by the INN150LA070A, a 150V/7mΩ, 2.2x3.2mm LGA part within Innoscience's low-voltage GaN HEMT range.
Yi Sun, general manager of Innoscience America and S`vP of Product and Engineering adds: "This design, which targets USB PD3.1 notebooks and power tools, is a full 2 percent more efficient than silicon designs; this proves what can be achieved if GaN FETs are used everywhere, even in a relatively simple design."
