NXP announces RF GaN chips for MIMO 5G radio
New family of RF power discretes targets 32T32R active antenna systems
NXP Semiconductors has announced a new series of RF power discrete solutions for 32T32R active antenna systems, using its latest GaN technology. This new series complements NXP’s existing portfolio of discrete GaN power amplifier solutions for 64T64R radios, covering all cellular frequency bands from 2.3 to 4.0 GHz.
NXP says it now offers the largest RF GaN portfolio for massive multiple input, multiple output (massive MIMO) 5G radios.
As 5G networks continue to expand around the world, mobile network operators are adding 32T32R radios to increase their massive MIMO coverage beyond ultra-dense urban areas into less dense urban and suburban areas. By combining 32 antennas instead of 64, coverage can be maintained more cost effectively, while maintaining the high-end 5G experience enabled by massive MIMO.
NXP says its 32T32R solutions deliver twice the power in the same package as its 64T64R solutions, resulting in a smaller and lighter overall 5G connectivity solution. This pin-compatibility enables network operators to scale rapidly across frequency and power levels.
“As 5G deployments continue to expand globally, network operators need to extend their coverage while maintaining performance. By offering twice the power in the same package size, NXP enables RF engineers to create base stations that are smaller, lighter and easier to deploy and conceal in urban and suburban areas,” said Jim Norling, VP and general manager, High Power Solutions, Radio Power, NXP
The new series of GaN discrete solutions are designed for 10 W average power at the antenna, targeting 320 W radio units, with up to 58 percent of drain efficiency. It includes driver and final-stage transistors and uses NXP’s RF GaN technology manufactured in its new GaN fab in Arizona.