SemiQ Launches 1200V 80mΩ SiC MOSFET Modules
Second-generation modules are developed in the industry-standard SOT-227 packages
SemiQ Inc has announced the release of its second-generation SiC 1200V 80mΩ power MOSFET modules developed in industry-standard SOT-227 packages.
These include the GCMS080B120S1-E1 1200V 80mΩ MOSFET with 1200V 10A parallel diode and the GCMX080B120S1-E1 1200V 80mΩ MOSFET without parallel diode.
SemiQ’s SiC MOSFETs are designed for electric vehicles, power supplies and data centres, and are specifically designed and tested to operate reliably in extreme environments. Compared to legacy silicon IGBTs, SemiQ’s MOSFETs are said to switch faster with lower losses, enabling system-level benefits through reduced size, weight and cooling requirements.
Michael Robinson, president and general manager at SemiQ said “The SOT-227 package is one of the best fully isolated power semiconductors packages around. Combined with our SiC MOSFETs and SiC diodes, these products are perfect for increasing efficiency in your Fast Charging and Inverters systems.”
40mΩ and 20mΩ modules in the SOT-227 are on the way.
