Loading...
News Article

Quantum Well design Boosts Green LED Efficiency

News

WHU team improves performance using an InGaN quantum well with gradually varying indium content

A research team from Wuhan University in China have made a major step toward improving the performance of green LEDs by a special design of quantum well. “Benefiting from the InGaN quantum well with gradually varying indium content, the green LEDs exhibited superior light output power (LOP) and lower efficiency droop,” said Shengjun Zhou, a professor at Wuhan University who directed the research.

The integration of multicolour emitters is extremely important for phosphor-free white light source and high-resolution full-colour display. The GaN-based blue LEDs and AlGaInP-based red LEDs have demonstrated superior optoelectronic performance. However, LEDs in the green spectral region suffer from poor efficiency (green gap) due to severe quantum-confined Stark effect (QCSE) and efficiency droop phenomenon, which limits the development of the integration of multicolour emitters.

The researchers demonstrated an InGaN quantum well with gradually varying indium content for green LEDs. The InGaN quantum well with gradually varying In content not only alleviates the QCSE, but also yields a low Auger recombination rate. Consequently, the gradual In content green LEDs exhibited increased LOP and reduced efficiency droop as compared to constant In content green LEDs.

When constant In content was replaced by gradual In content in InGaN quantum well, the LOP of green LED was increased from 33.9 mW to 55.2 mW at 60 A/cm2. Meanwhile, the efficiency droop of green LED was reduced from 61 percent to 37.6 percent at 150 A/cm2.

REF

'InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes' by Shengjun Zhou et al; Optics Letters, 47(5) 1291-1294, 2022.

Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
Adblocker Detected
Please consider unblocking adverts on this website