Panjit Semi Introduces 650V and 1200V SiC SBDs
Latest SiC Schottky barrier diodes are designed for superior performance with zero reverse recovery current
Taiwanese firm Panjit Semiconductor has launched it latest family of 650V and 1200V SiC Schottky Barrier Diodes (SBDs).
The diodes provide zero reverse recovery current, low forward voltage drop, temperature independent switching behaviour, high surge current capability, and excellent thermal performance. In addition, silicon carbide technology can provide lower conduction losses and deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.
The new SiC SBDs are aimed for engineers designing power conversion circuits for PV inverters, EV charging, industrial motors, telecom and server power supplies, and home appliance where they are facing challenges to deliver smaller footprints at higher system efficiencies.
They are packaged into through hole type TO-220AC、TO-263、TO-252AA and new added TO-247AD-2LD/3LD package while the current ratings are ranged from 4 A to 40 A.
