Loading...
News Article

Porotech reveals breakthrough MicroLED Displays

News

UK start-up exhibits brightest native InGaN-based Red, Green and Blue microLED displays at Touch Taiwan event

Porotech, a UK-based pioneer in microLED and GaN-based semiconductor technology, is showcasing the world's first set of native InGaN-based Red, Green and Blue microLED displays at 1920 x 1080 resolution with at least 2 million nits of brightness (≥ 2M nits) at Touch Taiwan event.

Porotech is the first in the industry to demonstrate all three-colour light-emitting elements produced with a single material and toolchain, enabled by its game-changing microLED technology platform, PoroGaN - including a native red InGaN display at 614-625nm wavelength. The platform’s proprietary subsurface porosity technology highlights a breakthrough to drastically increase brightness and efficiency in all three primary colours, while its scalable architectures simplify the manufacturing processes thus reducing cost, which are all critical requirements for the commercialisation of microLED displays for next-generation consumer AR/MR/VR glasses, smart wearables and smart displays.

Until now, the requirement to mix multiple material systems has complicated the manufacture of full-colour displays in the micro (µm) or nano pixel (nm) space, due to the marked drop in the efficiency of the red sub-pixel with decreasing pixel size. “Our deep material technology has unlocked the ability to produce microLED’s with high brightness and colour uniformity for RGB grown on a single InGaN-based material system and produced with a single tool chain. This will enable a wide range of use cases for optical system designs while optimising microdisplay manufacturing and improving yield for mass production,” Porotech CEO and Co-founder Dr. Tongtong Zhu said. “Meanwhile, we have been working on full-colour InGaN-based monolithic microLED displays and expect to be making an exciting announcement to the public very soon,” Zhu added.

Enabled by the proprietary technologies, PoroGaN platform has made it possible to produce a 614-625nm wavelength InGaN red display, as well as 536-543nm InGaN green and 444-447nm InGaN blue displays. The company will be demonstrating how the platform facilitates emission across a wide spectrum of wavelengths, from blue to green and into the reddest red ever natively produced from InGaN at Touch Taiwan.

Recently, Porotech has successfully created the world’s first microLED display based on native red InGaN – with an active area of 0.55 inches diagonally and a resolution of 960×540. In early 2022, the company secured $20 million Series A investment to accelerate global expansion and mass production of its microLED products.

Porotech will be exhibiting at Touch Taiwan (Display International Booth) at the Taipei Nangang Exhibition Center in Taiwan, on 27-29 April. After the Touch Taiwan exhibition, the company will introduce its dynamic pixel tuning capability to address the full colour spectrum at SID Display 2022 in San Jose, California, USA.

Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: