Loading...
News Article

GaN Systems and xFusion introduce Data centre Power Supply

News

100W/in3 GaN-Based PSUs enable data centres to increase revenue and reduce operating costs and carbon footprint


At PCIM Europe 2022, GaN Systems and xFusion Digital Technologies have introduced the xFusion 3kW PSU, the world’s first 100W/in3 with 80 Plus Titanium efficiency solution.

The increasing demand for more data and power combined with sustainability initiatives are driving change in the data centre industry. The switch to GaN System’s power transistors has demonstrated increased performance for products with power levels from 800 Watts to 6kW delivering substantial operating, financial, and environmental benefits.

Xfusion’s 3kw PSU features 80 Plus Titanium efficiency of 96 percent, a compact design with dimensions of 68mm x 183mm x 40.5mm, and supports 90~264V DC voltage and 180V~300V AC voltage input, 12V output.

“Customers implementing GaN Systems’ power semiconductors in their PSUs are seeing a continual increase in PSU power density from 45W/in3 to 63/in3, 82/in3, and now to 100W/in3," said Jim Witham, CEO of GaN Systems. "With these power density breakthroughs and efficiency improvements, the value proposition of GaN is undeniable, and we will see more PSU companies offering these solutions.”

GaN is gaining ground in data centre PSUs. With the growth of the data centre sector worldwide, operators are focused on profitability and reducing their CO2 emissions. For each set of 10 racks in the data centre, GaN-based PSUs can increase profits by $3 million, reduce the cost of operating a data centre and CO2 emissions output by more than 100 metric tons per year.

GaN Systems is demonstrating xFusion, SoluM, and other data centre PSUs as well as its EVKs and innovative thermal management solutions at PCIM. Additionally, solutions for mobile device charging, industrial power, and electric vehicles will be on show.

Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: