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Mitsubishi Electric Expands SiC Lineup


Newly designed, high-performing module now available in a familiar footprint

Mitsubishi Electric has launched a new SiC power module FMF400DY-24B. The 400A, 1200V Dual SiC MOSFET module includes an anti-parallel, low Vf, zero recovery loss, SiC SBD (Schottky Barrier Diode).

The module packages new designs into a current industry standard footprint (62mm x 108mm) for medical power supplies and general industrial applications. Designed for Vgs(on)=15V, the module is compatible with standard IGBT gate drivers and can be seamlessly incorporated into existing mechanical layouts for easy upgrades from Si IGBT technologies.

The module uses Mitsubishi Electric second generation SiC MOSFET chip technologies that are suitable for applications requiring high switching frequencies. The SiC module reduces power loss by approximately 70 percent compared with an equivalently rated Si IGBT.

“This new module is in a classic package footprint, with the latest technology inside for superior function and flexibility,” said Adam Falcsik, senior product manager of Mitsubishi Electric US’s Power Device group. “The FMF400DY-24B adds to Mitsubishi Electric’s growing lineup of SiC products.”

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