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Sensitron shrinks half-bridge module with EPC GaN FET

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High power density 350V GaN IPM is 60 percent smaller than alternative silicon solutions

By replacing traditional silicon FETs with EPC’s 350V, EPC2050 GaN FET, Sensitron, a US manufacturer of high rel power electronic components, has been able to reduce the size of its half bridge module by 60 percent while also improving the module’s already junction-to-case thermal conduction.

The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimised for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10 inch x 0.70 inch x 0.14 inch) allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

The SPG025N035P1B module uses the EPC2050, a 350 V rated GaN FET with 80 mΩ maximum RDS(on), 26 A peak current power in a small chip-scale package that measures 95 mm x 1.95 mm. The EPC2050 provides Sensitron with a high efficiency solution due to the low switching losses, and a high-power density solution due to the extremely small size. The EPC2050 is also ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.

“We are delighted to be working with EPC. By using the ultra-small EPC2050 GaN FET, we could design a 350V half bridge module with higher efficiency and 1/3rd the size of alternative silicon solutions allowing us to capture very high-density applications”, commented Richard Locarni, Director of New Business Development, Sensitron.

Alex Lidow, EPC’s CEO added, “This application is a great example of the real benefits that GaN brings. We have worked closely with Sensitron to find the best GaN FET to meet the design challenges that the power-density requirements of their module demands.”

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