Integra ships First 100V RF GaN
Integra’s partner Teledyne e2v HiRel to offer high reliability options for Space and defence
Integra, a provider of RF and microwave power solutions , has begun production shipments to US and European customers of its 100 V RF GaN technology. Tom Kole, Integra’s VP of sales and marketing, said, "In collaboration with our customers, our system engineers have helped design new radar architectures that take full advantage of the benefits of our third generation 100 V RF GaN technology. It’s exciting to see Integra’s 100 V RF GaN products move into production with customers as it signifies another industry first."
Integra also announced expansion of its 100 V RF GaN product portfolio with the introduction of seven new products for avionics, directed energy, electronic warfare, radar, and scientific market segments with power levels up to 5 kW in a single transistor. These products incorporate Integra’s 100 V RF GaN technology optimized to deliver the highest power and efficiency in a single transistor while maintaining reliable operating junction temperatures.
Devices are the IGW4000 100V, ultra-wideband multi chip module for electronic warfare; the IGN1012S2500 100V, 2.5kW L-band transistor for directed energy; the IGN1030S3100 75V, 3.1 kW L-band transistor for avionics; the IGN1030S3600 100V, 3.6 kW L-band transistor for avionics; the IGN1313S3600 100V, 3.6 kW 1.3GHz transistor; the IGN1214M3200 75V, 3.2 kW 1.2-1.4 GHz, L-band transistor for radar; and the IGN2729M1500 100V, 1.5 kW 2.7-2.9 GHz, S-band transistor for radar,
Additionally, Integra’s partner Teledyne e2v HiRel is offering high reliability options for all of Integra's 100 V RF GaN power devices and pallets targeted at the defence market. Brad Little, VP and general manager of Teledyne e2v HiRel, said: "Our space customers can benefit from Integra’s 100 V RF GaN products combined with Teledyne’s expertise and long heritage providing space RF components. These innovative products offer space payload engineers state-of-the-art power devices for insertion into their applications."
