+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

GaN Systems Launches Low-Cost GaN Transistor

News

Features lower on-resistance, increased robustness and thermal performance, and an 850V VDS (transient) rating.

GaN Systems has a introduced a new GaN power transistor, the GS-065-018-2-L, which features lower on-resistance, increased robustness and thermal performance, and an 850V VDS (transient) rating.

The GS-065-018-2-L is a 650V, 18A, 78 mΩ bottom-side cooled transistor suitable for smaller and lighter consumer adapters for laptops and gaming consoles and higher power density and efficiency in televisions and server SMPS.

Lower RDS(on) means lower power loss and higher power rating, resulting in higher efficiency and power density. The company says this 78 mΩ transistor is the perfect addition to industry favourites from GaN Systems, the 150 mΩ GS-065-011-2-L, and 50 mΩ GS-065-030-2-L. This new product targets 100W – 800W adapters, consumer and industrial power supplies, LED drivers, Bridgeless Totem Pole PFC circuits and motor drives.

“Our continuous design advancements are making GaN power semiconductors the transistor of choice in power electronics,” said Jim Witham, CEO of GaN Systems. “We are committed to continuing to lead the industry in application expertise and product innovation to empower our customers to maximize the performance of their products.”

The products are now available for purchase at GaN Systems’ distributors.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: