OnePlus uses Navitas GaN chips
GaNFast ICs can charge new smartphone from 1-30 percent in 3 minutes
Navitas Semiconductor has announced that its GaN power IC technology has been used by mobile-technology company OnePlus for the 160 W in-box fast charger supplied with the company’s latest OnePlus 10R 5G (worldwide) and OnePlus ACE 5G (China model) Android smartphones.
The new OnePlus 10R/ACE 5G features a MediaTek Dimensity 8100-Max chipset, a 6.7 inch AMOLED display supporting a 120 Hz refresh rate, and a 50 MP main camera. Its 4,500 mAhr battery offers 150 W SuperVOOC fast charging and the ‘in-box’ 160 W charger allows user to take their phone’s battery from 1-30 percent in just three minutes, and 1-100 percent in only 17 minutes.
This is the first time that OnePlus has offered an in-box GaN charger. Built around Navitas GaNFast ICs, the unit measures just 58 x 57 x 30 mm, giving it a power density of over 1.6 W/cc. As the next-gen semiconductor technology, GaNFast ICs integrate GaN power with drive, control, protection and sensing to enable 3x faster charging with up to 40 percent energy saving in only half size and weight, compared to legacy silicon solutions. The 160 W charger uses an NV6125 GaN power IC for the high-frequency boost PFC, followed by a high-frequency QR flyback converter.
