Loading...
News Article

GaN Systems Shrinks 140W Fast-Charger by 50 percent

News

GaN Systems has announced the availability of a turnkey 140W AC/DC charger reference design with USB PD3.1, Single Port Type-C Output.

Compared to silicon-based chargers, this design is said to be 40 percent lighter and 50 percent smaller, featuring an ultra-high-power density of 23W/in3. This design enhances GaN Systems’ portfolio (65W, 100W, 140W, 250W) of turnkey charger solutions for the consumer electronics market, enabling faster design cycles and continuing the roll-out of smaller, lighter, and more powerful and efficient chargers.

This new 140W GaN charger is a complete turnkey solution and includes comprehensive documentation of the fully assembled and tested charger. This fast-charger offers a high-frequency, 2-stage power topology with Bridgeless Totem Pole PFC and a Dual Switch QR Flyback topology. It uses GaN Systems’ 5×6 mm PDFN packaged GS-065-011-1-L power transistor.

“Notebooks and laptops are an increasingly essential part of our personal and professional lives, and as a result, demands for portability and mobility continue to increase,” said Paul Wiener, VP of strategic marketing at GaN Systems. “As the workspace definition continues to favor a hybrid model, from office to home, to café and beyond, we want lighter and smaller devices—and chargers have struggled to keep pace. GaN Systems is committed to making GaN easy to use, and the new 140W GaN charger design is another example of this commitment.”

The new design comes on the heels of GaN Systems’ announcement, Harman’s new InfinityLab InstantCharger 100W, 4 USB GaN charger, which uses GaN Systems’ transistors.

QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
Narrow-linewidth DFB lasers now at 405 and 488nm
Researchers develop tech for future fast-charging stations
Vermont GaN Tech Hub awarded nearly $24M
Onsemi completes buy-out of Qorvo SiC JFET business
Quantum Science announces Innovate UK funding
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: