Toshiba Launches 3rd Generation SiC MOSFETs
New lineup covers 1200V and 650V products
Toshiba Electronic Devices has launched the its 3rd generation SiC MOSFETs. Called the TWxxNxxxC series, they are said to deliver low on-resistance and significantly reduced switching loss. Ten products, five 1200V and five 650V products, have started shipping.
Toshiba has developed a device structure that reduces on-resistance per unit area by using a structure with a built-in schottky barrier diode developed for the 2nd generation SiC MOSFETs. This also reduces feedback capacitance in the JFET region. As a result, the new products reduce on-resistance per unit area by about 43 percent, allowing the drain-source on-resistance gate-drain charge to be lowered by about 80 percent. This cuts the switching loss by about 20 percent, and lowers both on-resistance and switching loss.
Applications include switching power supplies, EV charging stations, photovoltaic inverters, and uninterruptible power supplies
Toshiba says it will continue to expand its lineup of power devices and to enhance its production facilities, and aims to realise a carbon-free economy by providing high-performance power devices that are easy to use.
