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Altum RF Co-develops 400W S-band Power Amp

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GaN-based MMIC is a collaboration with TNO using WIN Semiconductors’ NP45-11 technology

Netherlands-based Altum RF, a supplier of RF to mmwave semiconductors, introduces a 400-Watt S-band power amplifier MMIC, using WIN Semiconductors' NP45-11 technology. The device was developed in collaboration with The Netherlands Organisation for Applied Scientific Research (TNO).

Operating between 2.8-3.3 GHz, this amplifier delivers an output power of 400 W and a PAE between 50-55 percent and is ideally suited for S-band radar applications. WIN Semiconductors' NP45-11 process is a 0.45 μm RF GaN-on-SiC HEMT technology manufactured with enhanced moisture protection, enabling the use of a plastic package.

“It is a privilege to collaborate with these two outstanding organisations, and we are excited to develop new, innovative technologies that significantly enhance performance capabilities for S-band radar,” stated Niels Kramer, Altum RF managing director Europe and VP of Marketing. “We are looking forward to industrialising this innovative S-band technology, and we see this as a logical extension of our catalog. Altum RF continues its strategic focus to expand our product portfolio from X-band and beyond.”

“Building on more than 30 years of leading-edge phased-array HPA research, it is impressive to see the outstanding performance this S-band power amplifier can achieve, using WIN Semiconductors' advanced GaN technology, and we are equally excited about the ability to commercialise it with Altum RF,” stated Kemo Agovic, market director Information and Sensor Systems at TNO. “We expect even more innovations in the future with this solid strategic partnership.”

David Danzilio, SVP, Technology and Strategic Marketing at WIN Semiconductors added, “WIN Semiconductors is thrilled to support the commercialisation of this S-band high power amplifier. Both Altum RF and TNO have extensive experience using WIN's compound semiconductor technologies to achieve market leading performance, and we are delighted to be the RF GaN technology partner for this new product.”

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