Ancora Semiconductor raises $14.6M
Delta Electronics affiliate focusing on GaN, announces first capital raising round
Ancora Semiconductor, a fabless Delta Electronics affiliate focusing on GaN technology, has announced the investments of its first capital raising round of around $14.6 M (456M Taiwanese dollars). The strategic investors are Rohm, Sino-American Silicon, uPI Semiconductors, and Delta Electronics. The capital is expected to accelerate Ancora's GaN development endeavours.
"GaN is the future of power electronics with benefits of faster switching frequencies, higher efficiency, and lower energy consumption. The ecosystem of GaN technology is evolving rapidly as applications are continuously emerging. We are thrilled to have Rohm, SAS and uPI as our strategic partners and investors. We are also grateful for the commitment by our parent company Delta, a leader in power and thermal management technologies and global provider of smart energy-saving solutions." , said T.K. Shing, president of Ancora Semiconductors.
He added, "This powerful alliance will enable us to establish an ecosystem with strong partners in substrate materials, IC design, applications and system solutions, to expedite the adoption of GaN technology that promises unprecedented performance value".
Ancora semiconductor was cultivated under Delta Electonics and formally founded in 2022 as fabless design company focusing in GaN devices and its integration. The Ancora product line includes GaN discrete components, System in Package (SiP) and System on Chip (SoC) with quality, reliability and durability proven under Delta's stringent qualification system.
Delta says that its commitment to provide a wide range of smart energy-saving solutions in high-efficiency power electronics, will provide additional momentum and fuel Ancora's long-term growth.
This alliance and capital raising is expected to enable Ancora to increase production capability to serve the growing demand for GaN devices in consumer electronics, telecom, and automotive applications. The ultimate goal is to maximise GaN performance to accelerate power technology innovation and contribute to achieve sustainable development based on energy efficiency.