Known good die in the transition to SiC modules
Aehr CEO to present at EU Power Semiconductor Summit
At the EU Power Semiconductor Executive Summit (EU PSES) in Munich, September 19-20, Aehr Test Systems' president and CEO Gayn Erickson will speak about the transition from discrete SiC components to multiple SiC die modules.
The presentation is titled, 'Evaluating Stabilisation of SiC MOSFET Gate Threshold Voltage at Wafer Level' and will discuss how the transition from discrete SiC components to multiple SiC die modules or integrated power modules has driven the requirement for known good die (KGD), where the gate threshold voltage stability is critical to the module reliability driven by the prerequisite to have matching and stable gate voltage threshold die-to-die.
This presentation will provide examples of gate threshold instabilities and failures along with the technologies and capabilities available that enable gate threshold stability and reliability at wafer level.
The presentation will not be webcast but afterwards a copy of it will be made available on the investor relations page of Aehr’s website.