Ampleon Launches L Band, GaN-SiC HEMT
High output power, high efficiency GaN-SiC HEMT transistor is designed for long pulse radars
At European Microwave Week (held in Milan between 27 through to 29 September), Ampleon will show the new CLL3H0914L-700 GaN-SiC HEMT.
This rugged GaN transistor is optimised for radar implementations where long pulse width and high-duty cycles are required. The transistor was engineered to achieve over 700W of peak output power from a single transistor while operating at a voltage of 50V with industry-leading efficiency of over 70 percent as well as designed thermally for long pulse applications, such as pulse widths (~2 milliseconds) and 20% duty cycles.
These L Band GaN HEMT superior performance capabilities are demonstrated in a variety of application reference designs shown at the booth - including ones for defence/aerospace bands (960-1250MHz and 1030-1090MHz), plus an L band ground base radar (1200-1400MHz).
This high-power density and low-thermal resistance HEMT is now in full volume production. Units are available directly from Ampleon or authorised distribution partners, RFMW and Digi-Key.