Navitas shows EV GaN and SiC Solutions at ECCE 2022
Latest GaNFast and GeneSiC technologies deliver energy savings, faster charging, extended range, and lower system costs
Navitas Semiconductor will show its GaN and SiC technologies at the IEEE Energy Conversion Congress & Expo (ECCE) in Detroit, Michigan (October 9th-13th).
ECCE 2022 features both industry-driven and application-oriented technical sessions, as well as industry expositions and seminars in electrical and electromechanical energy conversion.
Navitas’ 650 V-rated GaNFast power ICs with GaNSense technology are optimised for the broad range of 400 V-rated EV battery applications and AC-interfacing. New Navitas GeneSiC 1200 V FETs and diodes address 800 V-rail applications for higher-power trucks, buses, and performance passenger cars.
Navitas’ EV System Design Center provides complete platform designs to accelerate time-to-market, including a 3-in-1 800 V-rated bi-directional charger and DC-DC converter, with up to 18 percent weight savings, up to 20 percent energy savings, and up to 65 percent faster charging than competing solutions.
“Upgrading from legacy silicon to GaN and SiC accelerates EV adoption by two years,” said Llew Vaughan-Edmunds, senior director of marketing at Navitas Semiconductor. “ECCE is a critical forum for professionals working to optimize power conversion across the EV landscape, and a fertile environment for detailed discussions on new technology adoption.”
ECCE 2022 is at Huntington Place, 1 Washington Blvd., Detroit, MI 48226. Navitas will feature in a focus session on SiC and GaN applications in EV from 12.30 pm to 2.10 pm (EST) on Monday 10th October.
