GlobalFoundries gets $30M to expand GaN production
US federal funding will advance innovation and production of next-generation GaN power chips
GlobalFoundries has been awarded $30 million in US federal funding to advance the development and production of next-generation GaN on silicon semiconductors at GF’s facility in Essex Junction, Vermont.
The funding will enable GF to purchase tools and extend development and implementation of 200mm GaN wafer manufacturing for making chips for high-power applications including electric vehicles, industrial motors, and energy applications.
GF’s facility in Essex Junction, Vermont, near Burlington, was among the first major semiconductor manufacturing sites in the United States. Today nearly 2,000 GF employees work at the site, with a manufacturing capacity of more than 600,000 wafers per year. The Fab is a Trusted Foundry and manufactures secure chips in partnership with the US Department of Defense, for use in some of the nation’s most sensitive aerospace and defence systems.
“GlobalFoundries has been a critical partner to the Trusted Access Program Office, enabling semiconductor assurance (Trust) to advanced semiconductor technologies for the Department’s most advanced weapon systems platforms. This engagement is just one step the DoD is taking to ensure the US has continued access to advanced microelectronics technologies such as GaN,” said DMEA director Nicholas Martin.