+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

EPC doubles eGaN performance

News

80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint

GaN company EPC has launched the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.

The EPC2619 has an RDS(on) of 4 mOhms in a 1.5 mm x 2.5 mm, footprint. The maximum RDS(on) x Area of the EPC2619 is 15 mΩ*mm2 – five times smaller than 80 V silicon MOSFETs.

This product is designed for a range of motor drive applications. For example: 28 V – 48 V conversion for eBikes, eScooters and power tools; high density DC-DC converters; solar optimizers; and synchronous rectification converting 12 V – 20 V for chargers, adaptors, and TV power supplies.

The typical RDS(on) x QGD, which is indicative of power losses in hard-switching applications, is 10 times better than 80 V silicon MOSFETs. This enables switching frequencies that are 10 times higher than silicon MOSFETs and without an efficiency penalty, thus producing the highest power density. This makes the EPC2619 ideal for high frequency hard-switching 24 V – 48 V applications, such as used in buck, buck-boost, and boost converters.

The typical RDS(on) x QOSS, which is indicative of power losses in soft-switching applications, is 87 mOhm*nC, two times better than 80 V silicon MOSFETs. This makes the EPC2619 ideal for soft-switching applications, such as the primary rectification full bridge for LLC-based DCX DC-DC converters.

“This is just the first product of a new generation of discrete transistors and integrated circuits for EPC. With the launch of the EPC2619, EPC continues to keep GaN power devices on a path reminiscent of Moore’s Law,” noted Alex Lidow, EPC CEO and co-founder.

The EPC90153 development board is a half bridge featuring the EPC2619 GaN FET. It is designed for 80 V maximum device voltage and 30 A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market. This 50.8 mm x 50.8 mm board is designed for optimal switching performance and contains all critical components for easy evaluation.

The EPC2619 is priced at $1.70 each in 1 Ku volumes. The EPC90153 development board is price at $200.00 each.

CS International to return to Brussels – bigger and better than ever!


The leading global compound semiconductor conference and exhibition will once again bring together key players from across the value chain for two-days of strategic technical sessions, dynamic talks and unrivalled networking opportunities.


Join us face-to-face on 18-19 April 2023

  • View the agenda.
  • 3 for the price of 1. Register your place and gain complementary access to TWO FURTHER industry leading conferences: PIC International and Power Electronics International.
  • Email info@csinternational.net  or call +44 (0)24 7671 8970 for more details.

Register

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: