Loading...
News Article

Jaguar TCS Racing reveals latest car

News

Advanced electric racing car uses Wolfspeed SiC technology

Jaguar TCS Racing has revealed the Jaguar I-TYPE 6, designed and engineered to compete for the 2023 ABB FIA Formula E World Championship, as the innovative all-electric motorsport category moves into a new Gen3 era.The car uses SiC semiconductor from Wolfspeed.

The Jaguar I-TYPE 6 is believed to be the first FIA Formula E race car to feature both front and rear powertrains, as 250kW regen is added to the front and 350kW regen added at the rear, doubling the regenerative capability over the Gen2 model and removing the need for conventional rear brakes.

This third generation of Jaguar’s Formula E race car is 74kg lighter and 100kW more powerful than the cars that have preceded it, and now capable of reaching a maximum speed of 200mph.

Jay Cameron, Wolfspeed SVP and general manager, Power Business said: “Wolfspeed is proud to strengthen our relationship with Jaguar Land Rover by serving as the Official Power Semiconductor Partner for Jaguar TCS Racing. Our SiC semiconductor technology in the Jaguar I-TYPE 6 creates an ‘Innovation Lab on Wheels’ to engineer improved powertrain efficiency in a high-performance electric vehicle.

“Our collaboration with Jaguar TCS Racing in the ABB FIA Formula E World Championship will support our shared goal of translating innovation from the race to the road and enable Wolfspeed to support Jaguar TCS Racing as the ultimate competitor on the track.”

The next generation of Formula E will continue to be a real-world test bed for Jaguar TCS Racing and Jaguar Land Rover, as the team develops and innovates new cutting-edge technology to compete for World Championship success, it will power important race-to-road learning for electric powertrain, sustainability and software technologies.

Ahead of the 2023 championship, Wolfspeed has been confirmed as Official Power Semiconductor Partner. The partnership builds on Wolfspeed’s existing relationship with the team since 2017, where its advanced SiC technology has been used to accelerate on-track efficiency and performance.

It comes as Jaguar Land Rover also recently announced a strategic partnership with Wolfspeed, securing supply of SiC semiconductors for the next generation of electric vehicle inverters. Both partnerships will support the technology and knowledge transfer from race-to-road with a particular focus on efficiency.

Jaguar TCS Racing will race in Mexico City, on 14 January 2023 for the first of 17 races in 12 cities.

James Barclay, Jaguar TCS Racing Team Principal: “Launch day is always a proud and exciting moment for Jaguar TCS Racing, and this year more than ever, as we head into the Gen3 era of Formula E.

“Season 9 is set to be the most competitive and thrilling season to date, with an all-new all-electric race car, the Jaguar I-TYPE 6, iconic cities added to the calendar and our new team design has transformed the car into a work of art, in harmony with our modern luxury vision for Jaguar.

“We’re very excited to welcome Wolfspeed to the team as our Official Power Semiconductor Partner. Their expertise in SiC technology will play a pivotal role in our powertrain performance."

QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
Narrow-linewidth DFB lasers now at 405 and 488nm
Researchers develop tech for future fast-charging stations
Vermont GaN Tech Hub awarded nearly $24M
Onsemi completes buy-out of Qorvo SiC JFET business
Quantum Science announces Innovate UK funding
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: