Innoscience ships 100 millionth unit
8-inch GaN-on-Si HEMT company enables worldwide uptake
Chinese GaN company Innoscience Technology says it has demonstrated its ability to support high volume demand in GaN FETs globally, since it first started mass production on 8in wafer lines in 2019.
During 2022, Innoscience shipped its 100 millionth unit which it believes is a first for the industry and "represents a key milestone and proving the quality and reliability of our GaN devices", according to Lei Feng, chief marketing officer at Innoscience.
As well as sales growth, during 2022 the company established local sales and marketing customer support teams in the USA, Europe and South Korea, together with the previously set Taiwan and Japan sales teams.
Feng said: "Having local sales and application support to the customers in each region gives our customers better way to understand our technology and solution offering. Moreover, it helps us get better understanding on the customers’ future demand."
This year, innoscience introduced several families of devices, including Bi-GaN, a bi-directional GaN HEMTs that can be used inside smartphones to save space, increase efficiency and limit temperature rise, as well as externally in fast chargers. The company now offers a range of 30-150V and 650V parts including low 80mΩ RDS(on) 650V GaN HEMTs in industry-standard packages, and these have been demonstrated at APEC, PCIM and Electronica.
Concludes Denis Marcon, general manager of Innoscience Europe: “It’s exciting time to be part of a company that is truly enabling customers worldwide operating in a wide range of industrial and consumer applications to benefit from the advantages of GaN. Our technology is proven, and our GaN HEMTS are available in volume and priced cost-effectively.
