+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

EPC GaN FET helps shrink lidar designs

News

80V auto-qualified GaN FET offers designers smaller more efficient alternative to silicon MOSFETs

Efficient Power Conversion (EPC) has introduced the 80V, 11 mΩ EPC2252 that delivers 75 A pulsed current in a 1.5 mm x 1.5 mm footprint. The EPC2252 is said to offer power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade lidar found in autonomous driving and other ADAS applications, 48 V – 12V DC-DC conversion, and low inductance motor drives.

Lower switching losses, lower conduction losses, zero reverse recovery losses, and lower drive power enable high frequency designs at high efficiency. Combined with an extremely tiny footprint, these factors enable state-of-the-art power density.

The fast-switching speed of GaN, with sub-nanosecond transitions and the capability to generate high-current pulses in less than 3 ns, results in longer range and higher resolution in lidar for autonomous driving, parking, and collision avoidance.

“The EPC2252 makes an ideal switch for automotive lidar, low inductance motors, and 48V DC-DC conversions,” according to Alex Lidow, EPC’s co-founder and CEO. “EPC is committed to the automotive market with a growing family of devices that enable highly efficient, low-cost vehicle electrification and autonomous driving.”

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: