+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

EPC adds 200V, 10 mΩ GaN FET

News

Joins family of footprint compatible QFN packaged devices for high efficiency and design flexibility

EPC has introduced the 200 V, 10 mΩ EPC2307 GaN FET in a thermally enhanced QFN with a 3 mm x 5 mm footprint.

The EPC2307 is footprint compatible with the previously released 100 V, 1.8 mΩ EPC2302, the 100 V 3.8 mΩ EPC2306, the 150 V, 3 mΩ EPC2305, the 150 V, 6 mΩ EPC2308, and the 200 V, 5 mΩ EPC2304 allowing designers to trade off RDS(on) vs. price to optimise solutions for efficiency or cost by dropping in a different part number in the same PCB footprint.

The devices feature a thermally enhanced QFN package with exposed top. EPC says that the extremely small thermal resistance improves heat dissipation through a heatsink or heat spreader for excellent thermal behaviour, while wettable flanks simplify assembly, and footprint compatibility offers design flexibility to specs change for fast time to market.

This family of devices is said to bring several benefits to motor drive designs including very short deadtimes for high motor + inverter system efficiency, lower current ripple for reduced magnetic loss, lower torque ripple for improved precision, and lower filtering for lower cost.

For DC-DC conversion applications, these devices offer up to five times higher power density, excellent heat dissipation, and lower system costs in both hard switching and soft switching designs. Additionally, ringing and overshoot are both significantly reduced for better EMI.

“The continued expansion of this family of footprint compatible, easy to assemble devices provides engineers the flexibility to optimize their designs quickly without delaying time-to-market,” said Alex Lidow, EPC’s co-founder, and CEO. “This family of devices is ideal for smaller, lighter weight motor drives, more efficient and smaller DC-DC converters, and higher efficiency solar optimizers and microinverters.”

Development Board

The EPC90150 development board is a half bridge featuring the EPC2307 GaN. The purpose of these boards is to simplify the evaluation process and speed time to market. The 2 inch x 2 inch (50.8 mm x 50.8 mm) boards are designed for optimal switching performance and contain all critical components for easy evaluation.

The EPC2307 is priced at $3.54 each in 1 Ku volumes. The EPC90150 development board is priced at $200.00 each.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: