Loading...
News Article

VisIC paves way to high-power GaN traction inverters

News

Demonstrates an efficient GaN based 3-phase traction inverter with an automotive-grade PMSM motor

VisIC Technologies has successfully tested its 2.2mΩ 650V half-bridge power module, consisting of four parallel 8mΩ Power FET, in a 3-phase configuration on a dyno-test-bench using a PMSM motor at a major automotive OEM.

The company say this proves its D³GaN (Direct Drive D-Mode GaN) technology is well-suited even for the most challenging high-power automotive applications. Concerns about parallelisation and oscillations caused by fast-switching transients have been addressed.

The inverter phase current reached 350Arms (500A peak) at 400V, although test system set-up limitations prevented higher currents, which the 2.2mΩ Power Module is capable of.

Worldwide Harmonised Light Vehicles Test Procedure (WLTP) driving cycle testing was executed and achieved comparable efficiency with commercial Silicon Carbide-based modules, despite using early non-optimised module prototypes. VisIC says this means that D³GaN will deliver its promise of the highest efficiency, improving car costs through lighter, smaller power systems and a smaller battery size, without compromising the car's driving range. In addition, the D³GaN technology, based on GaN-on-Silicon semiconductor process, is delivering better than SiC performance at the more competitive Silicon cost level.

"With this great accomplishment, acknowledged by a leading automotive OEM, VisIC Technologies has provided overwhelming evidence for higher-efficiency at lower-cost future EV traction inverters, for the automotive world," said Tamara Baksht, CEO & co-founder of VisIC technologies. "The automotive market demands high-power, high-voltage, high-reliability GaN, and our D³GaN die and module solutions are the answer."

VisIC Technologies 3-phase prototype inverter system will be available for testing across additional customer sites towards the end of the 2nd quarter of 2023.

QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
Narrow-linewidth DFB lasers now at 405 and 488nm
Researchers develop tech for future fast-charging stations
Vermont GaN Tech Hub awarded nearly $24M
Onsemi completes buy-out of Qorvo SiC JFET business
Quantum Science announces Innovate UK funding
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: