Innoscience to demo GaN at APEC
Company will highlight home, automotive and data centre applications
GaN-on-Silicon company Innoscience will be at the upcoming Applied Power Electronics Conference (APEC) event in Orlando, Florida from March 19-23, 2023 at the Orange County Convention Center.
The company will be showing highlights from home, automotive and data centre applications. These include mobile phones from Oppo and RealMe showing how one Innoscience Bidirectional GaN device (VGaN) device can replace two silicon MOSFETs in a solution that is 50 percent smaller and more efficient than other silicon-based solutions. It will also show a Yadea e-mobility chargers made with InnoGaN for e-scooters.
For automotive applications, there will be demos of LIDAR systems from Hesai featuring 100V InnoGaN to drive the LIDAR’s laser; a compact 150W buck boost converters for in-car chargers; and a 3-phase motor drive power stage where three half-bridge SolidGaN devices from Innoscience replace nine silicon parts.
For data centres, Innoscience says it offers a solution for each stage of the power conversion that happens inside a data center to make them more efficient, smaller and even more cost effective with fewer components.
Innoscience will present three talks:
- 11.30am, March 21st, Marcon Denis, general manager of Innoscience Europe: ‘High performance GaN switches for LV and HV applications on cost-optimised 8-inch GaN-on-Si technology platforms.’
- 10.40am, March 22nd, Pengju Kong, VP product design engineering: ‘Integrated GaN Solution for LV applications: bringing efficiency and operating frequency to the next level.’
- 09.20am, March 23rd, Pengju Kong, VP product design engineering: ‘2.4kW All-GaN 48V to 12V bidirectional converter with BiGaN load switch for mild hybrid electric vehicles (MHEV).''
