Loading...
News Article

Transphorm and Weltrend partner on GaN SIP

News

System-in-package offers compact solution for USB-C PD adapters and other low power applications

GaN company Transphorm and Taiwanese fabless chip firm Weltrend Semiconductor have released their first GaN System-in-Package (SiP).

The WT7162RHUG24A SIP integrates Weltrend’s WT7162RHSG08 multi-mode flyback PWM controller with Transphorm’s 240mΩ, 650V SuperGaN FET.

The SIP is designed for use in 45 to 100 W USB-C PD power adapters charging smartphones, tablets, laptops, and other smart devices. It offers peak power efficiency of greater than 93 percent. Device samples will be available in the second quarter of 2023.

Transphorm will show the Weltrend SiP for the first time at the 2023 Applied Power Electronics Conference (APEC). The companies will also release details on the related WTDB_008 65W USB PD Power Adapter Evaluation Board during the event.

“The WT7162RHUG24A is the industry’s first publicly announced SiP using Transphorm GaN. It enables manufacturers to develop a less expensive system solution given fewer components are required and a smaller PCB can be used among other advantages. It also reduces system development time. Effectively, we’re removing design barriers for adapter manufacturers,” said Tony Lin, president, Weltrend.

“Notably, this product also allows Weltrend to move into a new market. It is the first-ever SiP for our PWM controllers, validating our commitment to supporting high volume growth sectors. And, with the integration of the GaN FET, we’ve raised the level of performance output.”

Primit Parikh, president and COO, Transphorm said: “The adapter fast charger market is a fast growing segment for GaN adoption today. We are gaining market share and continue to innovate, most recently with this GaN SiP, which allows for even easier use of our GaN devices."

QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
Narrow-linewidth DFB lasers now at 405 and 488nm
Researchers develop tech for future fast-charging stations
Vermont GaN Tech Hub awarded nearly $24M
Onsemi completes buy-out of Qorvo SiC JFET business
Quantum Science announces Innovate UK funding
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: