Rohm's latest SiC chips at PCIM Europe
Company to show 4th generation SiC MOSFETs and new moulded SiC modules
At PCIM Europe in Nuremberg, Germany (May 9th to 11th), Rohm Semiconductor will show its new power semiconductors including high-performance solutions for the e-mobility sector and beyond.
Rohm’s product highlights include 4th generation SiC MOSFETs, two new moulded SiC power modules, AEC-Q100-qualified gate drivers and intelligent low side power devices, a built-in 1700V SiC-MOSFET quasi-resonant AC/DC converter, and 730V integrated fly back converters for industrial auxiliary power supply and SMPS applications.
Rohm's latest 4th generation SiC MOSFET process supports 15V and 18V gate-source voltage, and according to the company, contributes to dramatic miniaturisation and low power consumption in various applications including automotive inverters and various switching power supplies. Two new versions of the company's moulded SiC power modules use 4th generation SiC MOSFET 750V and 1200V devices in different RDS_on variations. Both achieve up to 30kW power application depending on their conditions.
Rohm will show 150V GaN HEMTs (GNE10xxTB series) optimised for power supply circuits in industrial and communication equipment for industry highest (8V) gate breakdown voltage technology.
Rohm will participate in panel discussions, conference presentations, and poster sessions at PCIM Europe conference.
