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TNSC announces material change


Company to sell lower moisture version of RASIRC's anhydrous hydrazine material

Taiyo Nippon Sanso Corporation (TNSC) has announced that it will be selling a lower moisture content version of RASIRC's anhydrous hydrazine material BRUTE-Hydrazine.

Contamination with impurities such as moisture during the semiconductor manufacturing process negatively affects semiconductor crystal quality and electrical characteristics, which in turn impacts device characteristics and product yield. To resolve these issues, RASIRC has succeeded in reducing the water concentration in the vapour phase of BRUTE-Hydrazine from a tenth to one hundredth of that in conventional products by improving the purification technology.

Historically, metal-nitride MOCVD and ALD films have been fabricated with ammonia (NH3) as a common nitridation source. But hydrazine (N2H4) is more reactive and lowers the temperature of the deposition process, thus improving deposition rate and electrical properties. III-V nitride devices, for instance, require a more reactive nitrogen source to reduce deposition temperatures and increase compositional stability.

In addition, hydrazine can be applied not only as a nitridation source for film deposition but also for surface cleaning and film modification by taking advantage of its excellent reducing properties.

Going forwards, TNSC says it will expand the sales of BRUTE-Hydrazine, mainly for semiconductor manufacturing process. The results of a SiN film deposited via ALD using BRUTE-Hydrazine will be reported at the 23rd International Conference on Atomic Layer Deposition (ALD/ALD 2023) to be held in Seattle.

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