Nexperia releases 650V SiC diodes
Merged PiN Schottky structure delivers high robustness and efficiency
Nexperia has introduced a 650 V SiC Schottky diode designed for power applications which require ultra-high performance, low loss, and high efficiency.
The 10 A, 650 V SiC Schottky diode is an industrial-grade part designed to address the challenges of demanding high voltage and high current applications. These include switched-mode power supplies, AC-DC and DC-DC converters, battery-charging infrastructure, uninterruptible power supplies and photovoltaic inverters.
The PSC1065K is said to deliver leading-edge performance with temperature-independent capacitive switching and zero recovery behaviour with a high figure-of-merit (QC x VF). Its switching performance is almost entirely independent of current and switching speed variations, according to Nexperia.
The merged PiN Schottky (MPS) structure of the PSC1065K provides additional benefits, such as robustness against surge currents that eliminates the need for additional protection circuitry. These features reduce system complexity and enable hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications.
The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. Additional package options include the surface mount (DPAK R2P and D2PAK R2P) and through-hole (TO-247-2) with a real 2-pin configuration that enhances reliability in high-voltage applications at temperatures up to 175 °C.
Nexperia says it plans to add to its range of SiC diodes with automotive-grade parts that operate at 650 V and 1200 V voltages with currents in the 6-20 A range. Samples and production quantities of the new SiC diodes are available now.
