WIN releases 50V RF GaN tech for high power MMICs
NP25-20 is a complete X to Ku-band front-end solution with over 10 watts/mm output power density and sub-1dB noise figure
Taiwanese compound semiconductor foundry WIN Semiconductors has released a 50V 0.25µm-gate RF GaN platform, which targets high performance front-end applications including radio access networks, satellite communications, electronic warfare and radar systems.
The NP25-20 technology supports full MMICs enabling WIN customers to design compact, linear or saturated high-power amplifiers, rugged low noise amplifiers and single chip front end solutions through 18GHz.
The NP25-20 GaN technology employs a source-coupled field plate for improved breakdown voltage and operates at a drain bias of 50 volts. This technology is fabricated on 100mm SiC substrates with through-wafer vias for low inductance grounding. At X-band, NP25-20 demonstrates excellent transmit and receive performance with saturated output power of 10 watts/mm,18 dB linear gain and 60% power added efficiency.
When biased for noise performance at 10GHz, NP25-20 provides minimum noise figure of 0.8dB with 12dB associated gain. The combination of power density and superb noise figure from NP25-20 enables high-performance single chip front ends without sacrificing transmit power or receiver sensitivity.
“The performance versatility of NP25-20 is unique for RF GaN technology. A GaN MMIC platform with 10 watts/mm output power alone is an achievement. Combining surprising noise performance with high power switching in the same device creates a new toolset for customers to commercialise market leading products for a wide range of applications,” said David Danzilio, SVP of WIN Semiconductors.
WIN Semiconductors will be showing its compound semiconductor RF and mmWave solutions at the 2023 International Microwave Symposium being held at the San Diego Convention Center, June 11th through June 16th.