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Infineon adds 650V SiC MOSFET in TOLL packaging


Latest CoolSiC MOSET offers better thermal performance, power density, and easier assembly

Infineon has developed a new SiC CoolSiC MOSFET 650V in TO leadless (TOLL) packaging. The devices are said to be optimised for the lowest losses, the highest reliability, and ease-of-use in applications such as SMPS for servers, telecom infrastructure as well as energy storage systems and battery formation solutions.

CoolSiC 650V trench-based power SiC MOSFETs are offered in a range of options to suit different applications. The new family comes in a JEDEC-qualified TOLL package featuring a low parasitic inductance, allowing for higher switching frequency, reduced switching losses, good thermal management, and automated assembly.

The compact form factor enables efficient and effective usage of the board space, empowering system designers to achieve exceptional power density, according to Infineon.

The CoolSiC MOSFETs 650V are designed for high reliability even in harsh environments, making them suitable topologies with repetitive hard commutation.

The inclusion of the .XT interconnect technology is said to further enhance the devices’ thermal performance by reducing the thermal resistance and thermal impedance. In addition, the new devices feature a gate threshold voltage greater than 4V for robustness against parasitic turn-on, a robust body diode, and the strongest gate oxide (GOX) in the market resulting in low FIT (failures in time) rates.

While a cut-off voltage (V GS(off)) of 0V is generally recommended to simplify the driving circuit (unipolar driving), the new portfolio supports a wide driving interval of V GS voltage within the range of -5 V (turn-off) to 23 V (turn-on). This ensures ease-of-use and compatibility with other SiC MOSFETs and standard MOSFET gate-driver ICs. This is paired with higher reliability, reduced system complexity, and the enablement of automated assembly, reducing system and production costs and accelerating time-to-market.

The new CoolSiC MOSFET 650V in TOLL industrial-grade discretes are available in various drain-source on-resistance (R DS(on)) options from 22 to 83 mΩ and can be ordered now (107, 163 mΩ and 260 mΩ versions will be available on-demand).

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