Aixtron launches compact platform for GaN devices
New G10-GaN cluster tool targets high-volume manufacturing of GaN-based power and RF devices
Deposition equipment specialist Aixtron SE has launched a new compact cluster solution for GaN based power and RF devices. The G10-GaN is currently being presented at SEMICON Taiwan in Taipei.
“We are proud that our new G10-GaN platform has already been qualified for volume production of GaN power devices by a leading US device manufacturer. The new platform delivers twice the productivity per cleanroom area than our previous product while enabling a new level of material uniformities, unlocking new levers of competitiveness for our customers,” says Felix Grawert, CEO and president of Aixtron SE.
Packed in a new, compact layout to take advantage of the smallest cleanroom space, the platform is said to feature novel reactor inlets, improving material uniformity by a factor of two for optimum device yields. On-board sensors are complemented by a new software suite and fingerprint solutions to ensure the system consistently delivers the same performance run after run, between maintenance for all process modules – extending the equipment uptime by more than 5 percent compared to the previous generation.
The cluster can be equipped with up to three process modules, delivering a capacity of 15x200 mm wafers thanks to Planetary batch reactor technology – enabling a 25 percent cost reduction per wafer compared to previous products, according to the company.
