Loading...
News Article

Imec announces SiGe BiCMOS optical receiver

News

Team achieves 200 Gbps at a rate by integrated travelling-wave SiGe BiCMOS transimpedance amplifier with a silicon photonics Ge photodetector

At the European Conference on Optical Communication (ECOC) taking place in Glasgow this week, a team of researchers from IDLab, an Imec research group at Ghent University, Belgium, presents an optical receiver achieving a gross data rate of 200 Gbps.

Their approach, combining a SiGe BiCMOS travelling-wave electronics integrated circuit and a silicon photonics Germanium photodetector, offers not only speed but also scalability, two prerequisites if we want to meet exploding data-rate needs.

The need for speed
From artificial intelligence to cloud computing and 5G: data-intensive applications are finding their way into different industries and many aspects of our daily lives. To keep up with today’s and especially tomorrow’s data-processing demands, data centers will need optical communication networks that perform at higher and higher speeds.

“Currently, the most performant optical datacom transceivers operate at speeds up to 800 Gbps, using for example 8 x 100 Gbps channels, but the field is envisioning doubling the channel capacity to 200 Gbps to reduce the transceiver complexity, cost and power consumption while improving manufacturing yield,” says Peter Ossieur, program manager for high-speed transceivers at Imec’s IDLab and professor at Ghent University.

Fast and scalable
Ossieur is leading a team of researchers working towards high-speed integrated circuits for photonics applications. His team has now achieved a gross data rate of 200 Gbps by co-integrating a travelling-wave SiGe BiCMOS transimpedance amplifier with a silicon photonics Ge photodetector. Aside from the speed, the use of mainstream SiGe BiCMOS makes the technology more scalable and therefore affordable.

“An alternative to reach such speeds are InP electronics, which is a more expensive and less scalable technology,” says Ossieur. “SiGe BiCMOS allows us to integrate more functionalities and the chips can also be manufactured at higher volumes.”

The next generation
If optical transceivers are to keep up with exploding data rates, all building blocks need to handle higher speeds. The team demonstrates their result in a setup with a silicon photonics Ge photodetector from Imec’s integrated silicon photonics platform (iSiPP), targeted to the telecom, datacom and medical diagnostics industries. Joris Van Campenhout, fellow and program director optical I/O at Imec, says the new optical receiver represents one of the many steps imec is taking to ready its silicon photonics platforms for demanding 200Gbps-and-beyond applications: “These latest results represent one more data point showcasing the capability of imec’s silicon photonics platform (iSiPP) to operate at lane rates of 200Gbps, a key requirement for upcoming pluggable and co-packaged optics. .”

SPONSOR MESSAGE

Secure Your Hydrogen Supply

A study supply of high-purity hydrogen is critical to semiconductor fabrication. Supply chain interruptions are challenging manufacturers, leading to production slowdowns and stoppages. On-site hydrogen generation offers a scalable alternative for new and existing fabs, freeing the operator from dependence on delivered gas.

Plant managers understand the critical role that hydrogen plays in semiconductor fabrication. That important job includes crystal growth, carrier gas, wafer annealing, and in the emerging Extreme UV Lithography (EUV) that will enable new generations of devices. As the vast need for semiconductors grows across all sectors of world economies, so does the need for high-purity hydrogen.

Take control with Nel on-site hydrogen generation.

Read more
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
Narrow-linewidth DFB lasers now at 405 and 488nm
Researchers develop tech for future fast-charging stations
Vermont GaN Tech Hub awarded nearly $24M
Onsemi completes buy-out of Qorvo SiC JFET business
Quantum Science announces Innovate UK funding
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
x
Adblocker Detected
Please consider unblocking adverts on this website